Перегляд за автором "Datsenko, L.I."

Результати 1-6 з 6

Complex diffractometrical investigation of structural and compositional irregularities in GaAs:Si/GaAs films heavily doped with silicon

Datsenko, L.I.; Klad’ko, V.P.; Lytvyn, P.M.; Domagala, J.; Machulin, V.F.; Prokopenko, I.V.; Molodkin, V.B.; Maksimenko, Z.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)

Complex of X-ray diffractometrical investigations, both angular and spectral dependences of a reflectivity for quasi-forbidden reflections, enable not only to discover structural microdefects and to measure their radii r ...
Effect of neutron irradiation and doping level on defect structure formation in gallium arsenide crystals

Seitmuratov, M.S.; Klad'ko, V.P.; Gudymenko, O.I.; Datsenko, L.I.; Prokopenko, I.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)

Using the technique of diffuse x-ray scattering at the "tails" of diffraction reflection curves, we analyze the effect of irradiation of dislocation GaAs crystals with high-energy neutrons on evolution of radiation clusters ...
Influence of absorption level on mechanisms of Braggdiffracted x-ray beam formation in real silicon crystals

Klad'ko, V. P.; Grigoriev, D.O.; Datsenko, L.I.; Machulin, V.F.; Prokopenko, I.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)

The methods of numerical calculations based on the formulae of the X-ray dynamic scattering theory by real crystals and of the Takagi-Topin equations were used for investigation of the basic regularities of inherent to the ...
Investigation of superlattice structure parameters using quasi-forbidden reflections

Kladko, V.P.; Datsenko, L.I.; Korchovyi, A.A.; Machulin, V.F.; Lytvyn, P.M.; Shalimov, A.V.; Kuchuk, A.V.; Kogutyuk, P.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)

We studied possibilities of a nondestructive X-ray technique for testing short-period strained GaAs-AlAs superlattices. An analysis of the quasi-forbidden 200 reflections may be used for determination of superlattice layer ...
Structural and composition irregularities in GaAs:Si/GaAs films grown by liquid-phase epitaxy

Kladko, V.P.; Datsenko, L.I.; Maksimenko, Z.V.; Lytvyn, O.S.; Prokopenko, I.V.; Zytkiewicz, Z. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)

Stoichiometry parameters as well as the microdefects ones for GaAs:Si/GaAs thin films grown by liquid-phase epitaxy were investigated by means of method of X-ray integrated reflectivity energy dependencies analysis for ...
Structure perfection variations of Si crystals grown by Czochralski or floating zone methods after implantation of oxygen or neon atoms followed by annealing

Datsenko, L.I.; Auleytner, J.; Misiuk, A.; Klad'ko, V.P.; Machulin, V.F.; Bak-Misiuk, J.; Zymierska, D.; Antonova, I.V.; Melnyk, V.M.; Popov, V.P.; Czosnyka, T.; Choinski, J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)

Structure perfection of the silicon crystals grown by the Czochralski and floating zone methods after implantation with oxygen or neon fast iones followed by annealing at the temperatures T ~ 1050-1150 ⁰0C, when large SiOx ...

Результати 1-6 з 6

Пошук

Розширений пошук

Перегляд

Вся бібліотека

Перегляд за автором "Datsenko, L.I."

Репозиторій DSpace/Manakin

Перегляд за автором "Datsenko, L.I."

Пошук

Перегляд

Вся бібліотека

Мій обліковий запис